COMPARATIVE ANALYSIS OF DIFFERENT CAD METHODS FOR EXTRACTION OF THE HEMT NOISE WAVE MODEL PARAMETERS

Vladica Đorđević, Zlatica Marinković, Olivera Pronić-Rančić

DOI Number
-
First page
117
Last page
130

Abstract


The noise wave model has appeared as a very appropriate model for the purpose of transistor noise modeling at microwave frequencies. The transistor noise wave model parameters are usually extracted from the measured transistor noise parameters by using time-consuming optimization procedures in microwave circuit simulators. Therefore, three different Computer-Aided Design methods that enable more efficient automatic determination of these parameters in the case of high electron-mobility transistors were developed. All of these extraction methods are based on different noise de-embedding procedures, which are described in detail within this paper. In order to validate the presented extraction methods, they were applied for the noise modeling of a specific GaAs high electron-mobility transistor. Finally, the obtained results were used for the comparative analysis of the presented extraction approaches in terms of accuracy, complexity and effectiveness.

Keywords

artificial neural networks, computer-aided design, GaAs HEMT, noise parameters, noise wave model

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References


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DOI: https://doi.org/10.22190/FUACR1702119D

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