IMPACT OF HIGH-Κ METAL OXIDE AS GATE DIELECTRIC ON THE CERTAIN ELECTRICAL PROPERTIES OF SILICON NANOWIRE FIELD-EFFECT TRANSISTORS: A SIMULATION STUDY

Sanat Kr. Das, Bibek Chettri, Prasanna Karki, Bhakta Kunwar, Pronita Chettri, Bikash Sharma

DOI Number
https://doi.org/10.2298/FUEE2304553D
First page
553
Last page
565

Abstract


Standard Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) are gaining prominence in low-power nanoscale applications. This is largely attributed to their proximity to physical and thermal limits, rendering them a compelling option for energy-efficient electronic devices. In this study, we hypothesized that the high-κ HfO2 in a quasi-ballistic SiNW MOSFET acts as the gate dielectric. In this case, the data from the TCAD simulation and the model demonstrated exceptional agreement. The proposed model for a SiNW MOSFET with high-κ HfO2 exhibits a consistently increasing drain current, albeit with a smaller magnitude compared to a quasi-ballistic device (QBD). Additionally, it shows reduced mobility and decreased transconductance when considering the combined effects of scattering and temperature. As gate voltage increases, temperature-induced transconductance decline in SiNW MOSFETs becomes significant. Our method is suitable for modeling scattered SiNW MOSFETs with temperature effects, as TGF values are similar in the subthreshold region for both Near Ballistic and Scattered SiNW MOSFET models.

Keywords

high-κ dielectric, MOSFET, nanowire, metal oxide, transconductance

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References


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