B Vandana, Jitendra Kumar Das, B Shivalal Patro, Sushanta Kumar Mohapatra

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In view of reduced electric field and avoiding source drain engineering, the work exploresstrain effect in junctionless channel transistor. To achieve scaled IOFF and maintain ION, here the device SG-OI JLCT is proposed. The study discusses higher switching action with mole fraction x = 0.25. The dependency of ϕM and the ND is responsible for maintaining constant current for overall analysis.


SG-OI JLCT, SOI JLT, Drift Diffusion carrier mobility, ON-OFF Currents.

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