Corrigendum HORIZONTAL CURRENT BIPOLAR TRANSISTOR (HCBT) – A LOW-COST, HIGH-PERFORMANCE FLEXIBLE BICMOS TECHNOLOGY FOR RF COMMUNICATION APPLICATIONS

Editorial Team

DOI Number
10.2298/FUEE1703429E
First page
429
Last page
429

Abstract


The Editor-in-Chief has been informed that in the article Tomislav Suligoj, Marko Koričić, Josip Žilak, Hidenori Mochizuki, So-Ichi Morita, Katsumi Shinomura, Hisaya Imai. Horizontal Current Bipolar Transistor (HCBT) – A Low-Cost, High-Performance Flexible BICMOS Technology for RF Communication Applications. Facta Universitatis, Series: Electronics and Energetics, Vol. 28. No 4, 2015, pp. 507-525. DOI: 10.2298/FUEE1504507S Fig. 15 with its legend has been ommited in published version of the paper. After further discussion with the corresponding author, Editor-in-Chief has decided to publish a corrigendum for this article, providing the figure and legend of Fig. 15.

Link to the corrected article: DOI:10.2298/FUEE1504507S


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ISSN: 0353-3670