INTRODUCING A NOVEL HIGH-EFFICIENCY ARC LESS HETEROUNCTION DJ SOLAR CELL

Reza Sabbaghi, Sobhan Abasian

DOI Number
-
First page
89
Last page
100

Abstract


The present study examined the structure and performance of heterojunctions on the fill factor, short circuit current and open circuit voltage of a GaAs/InGap dual-junction solar cell. Semiconductors with a high bandwidth from the шѵ group were studied to obtain the high open circuit voltage. The lattice constant for matching two semiconductors and mobility of electrons and holes were compared in these semiconductors. The Al0.5In0.5p semiconductor was chosen for the heterojunctions with GaAs and InGap. The structure of AlInp-GaAs/AlInp-InGap was obtained by inserting an AlInp-InGap heterojunction at the top and AlInp-GaAs heterojunction at the bottom of a InGap/GaAs dual-junction cell. For this structure, JSC = 22.96 mA/cm2, Voc = 2.72 V, FF = 93.26% and Eff= 58.28% were obtained under AM1.5 (1 sun) of radiation.

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