Reza Sabbaghi, Sobhan Abasian

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The present study examined the structure and performance of heterojunctions on the fill factor, short circuit current and open circuit voltage of a GaAs/InGap dual-junction solar cell. Semiconductors with a high bandwidth from the шѵ group were studied to obtain the high open circuit voltage. The lattice constant for matching two semiconductors and mobility of electrons and holes were compared in these semiconductors. The Al0.5In0.5p semiconductor was chosen for the heterojunctions with GaAs and InGap. The structure of AlInp-GaAs/AlInp-InGap was obtained by inserting an AlInp-InGap heterojunction at the top and AlInp-GaAs heterojunction at the bottom of a InGap/GaAs dual-junction cell. For this structure, JSC = 22.96 mA/cm2, Voc = 2.72 V, FF = 93.26% and Eff= 58.28% were obtained under AM1.5 (1 sun) of radiation.

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J. A. Hutchby, R. J. Markunas, S. M. Bedair, Material aspects of the fabrication of multi junction solar cells // Proceedings of the 14th Critical Reviews of Technology Conference. Arlington, 1985, P. 40-61.

M. R. Lueck, C. L Andre., A. J. Pitera, M.L. Lee, E.A. Fitzgerald, S.A. Ringel, Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage// IEEE Electron Device Lett. 2006. Vol.27. P.142-144.

J.W. Leem, Y.T. Lee, J.S. Yu, Optimum design of InGaP/GaAs dual-junction solar cells with different tunnel diodes// Opt. Quantum Electron. 2009. Vol.41. P. 605-612.

K.J. Singh, S.K. Sarkar, Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers// Opt. Quantum Electron. 2011. Vol.43. P.1-21.

P.P. Nayak, J.P. Dutta, G.P. Mishra, Efficient InGaP/GaAs DJ solar cell with double back surface field layer// Eng. Sci. Technol. Int. J. 2015. Vol.18. P. 325-335.

G.S. Sahoo, P.P. Nayak, G.P. Mishra, An ARC less InGaP/GaAs DJ solar cell with hetero tunnel junction// Superlattices and Microstructures 2016. Vol.95. P.115-127.

F.S.Gabibov, E.M. Zobov, Effect of optical and thermal stimulation on GaAs photosensitivity// Inorganic Materials. 2013. Vol. 49. No. 8. P. 754–757.

A.S. Gudovskikh, K.S. Zelentsov, N.A. Kalyuzhnyy, V.M. Lantratov, S.A. Mintairov, Anisotype GaAs based heterojunctions for III-V multijunction solar cells// 25th European Photovoltaic Solar Energy Conference and Exhibition 2010.

M.R. Islam, R.D. Dupuis, A.L. Holmes, A.P. Curtis, N.F. Gardner, G.E. Stillman, J.E. Baker, R. Hull, Luminescence characteristics of InA1P-InGaP heterostructures having native-oxide windows// Journal of Crystal Growth. 1997. Vol. 170. P. 413-417.

I.Vurgaftman, J.R. Meyer, L.R. Rammohan, Band parameters for III-V compound semiconductors and their alloys. J. Appl. Phys. 2001. Vol. 89. P. 5815.

SILVACO Data Systems Inc, Silvaco ATLAS User’s Manual, 2010.

H.Y. Lee, C.T. Lee, The investigation for various treatments of InAlGaP Schottky diodes// Proceedings of the 8th International Conference on Electronic Materials. IUMRS-ICEM 23. 2002. P. 99-102.

P. Michalopoulos, A novel approach for the development and optimization of state-of-the-art photovoltaic devices using silvaco// naval postgraduate school Monterey, California, 2002.

J.P. Dutta, P.P. Nayak, G.P. Mishra, Design and evaluation of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized double top BSF layer// Optik. 2016. Vol. 127. P. 4156-4161.


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