Sobhan Abasian, Reza Sabbaghi-Nadooshan

DOI Number
First page
Last page


The present study was undertaken to examine the structure and performance of hetero junctions on the fill factor, short circuit current and open circuit voltage of aInGaP/GaAsdual-junction solar cell. This goal of this work was to reduce recombination in the bottom cell so that the electrons and holes produced in the top cell with the lowest recombination participate in the output current. Semiconductors with a high bandwidth from the ѵш group were studied in order to obtain a high open circuit voltage. By observing mobility and lattice constant semiconductors (Al0.52In0.48P, GaAs and In0.49Ga0.51P), it was concluded that the semiconductor Al0.52In0.48P has high electron mobility and hole mobility and that the lattice constant matched to the GaAs semiconductor can be effective in reducing recombination. The cathode current and absorbed photons show that the composition InGaP/AlInP increased the number of charge carriers in the top cell. The structure of InGaP-AlInP/GaAs-AlInP was obtained by inserting an InGaP-AlInP heterojunction at the top and GaAs-AlInP heterojunction at the bottom of aInGaP/GaAs dual-junction cell. For this structure, short circuit current (JSC)  = 22.96 mA/cm2, open circuit voltage (Voc) = 2.72 V, fill factor (FF) = 93.26% and efficiency(η)= 58.28% were obtained under AM1.5 (1 sun) of radiation.


Solar cell, Dual-junction, heterojunction, ARC less

Full Text:



J.A. Hutchby, R J. Markunas, S.M. Bedair, "Material aspects of the fabrication of multi junction solar cells", In Proceedings of the 14th Critical Reviews of Technology Conference. Arlington, 1985, pp. 40-61.

M.R. Lueck, C.L. Andre, A.J. Pitera, M.L. Lee, E.A. Fitzgerald, S.A. Ringel, "Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage", IEEE Electron Device Lett., vol. 27, pp. 142-144, 2006.

J.W. Leem, Y.T. Lee, J.S. Yu, "Optimum design of InGaP/GaAs dual-junction solar cells with different tunnel diodes", Opt. Quantum Electron., vol. 41, pp. 605-612, 2009.

K.J. Singh, S.K. Sarkar, "Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers", Opt. Quantum Electron., vol. 43, pp.1-21, 2009.

P.P. Nayak, J.P. Dutta, G.P. Mishra, "Efficient InGaP/GaAs DJ solar cell with double back surface field layer", Eng. Sci. Technol. Int. J., vol.18, pp. 325-335, 2015.

S. Abbasian, R. sabbaghi-Nadooshan, "Design and evaluation of ARC less InGaP/AlGaInP DJ solar cell", Optik., vol. 136, pp. 487-496, 2017.

G.S. Sahoo, P.P. Nayak, G.P. Mishra, "An ARC less InGaP/GaAs DJ solar cell with hetero tunnel junction", Superlattices and Microstructures, vol. 95, pp. 115-127, 2016.

F.S.Gabibov, E.M. Zobov, "Effect of optical and thermal stimulation on GaAs photosensitivity", Inorganic Materials, vol. 49, no. 8, pp. 754–757, 2013.

A.S. Gudovskikh, K.S. Zelentsov, N.A. Kalyuzhnyy, V.M. Lantratov, S.A. Mintairov, "Anisotype GaAs based heterojunctions for III-V multijunction solar cells", In Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition 2010.

M.R. Islam, R.D. Dupuis, A.L. Holmes, A.P. Curtis, N.F. Gardner, G.E. Stillman, J.E. Baker, R. Hull, "Luminescence characteristics of InA1P-InGaP heterostructures having native-oxide windows", Journal of Crystal Growth, vol. 170, pp. 413-417, 1997.

I. Vurgaftman, J.R. Meyer, L.R. Rammohan, "Band parameters for III-V compound semiconductors and their alloys". J. Appl. Phys., vol. 89, pp. 5815, 2001. [12] SILVACO Data Systems Inc, Silvaco ATLAS User’s Manual, 2010.

H.Y. Lee, C.T. Lee, "The investigation for various treatments of InAlGaP Schottky diodes",In Proceedings of the 8th International Conference on Electronic Materials, IUMRS-ICEM 23, 2002, pp. 99-102.

P. Michalopoulos, "A novel approach for the development and optimization of state-of-the-art photovoltaic devices using silvaco", Naval Postgraduate School Monterey, California, 2002.

A. Luque, S. Hegedus, Handbook of Photovoltaic Science and Engineering, England, John Wiley & Sons Ltd., 2003 , pp. 83-87.

S. M. Sze, M. K. Lee, .Semiconductor Devices Physics and Technology, Wiley 2010

J.P. Dutta, P.P. Nayak, G.P. Mishra, "Design and evaluation of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized double top BSF layer", Optik., vol. 127, pp. 4156-4161, 2007.


  • There are currently no refbacks.

ISSN: 0353-3670