METHOD FOR INTEGRATED CIRCUITS TOTAL IONIZING DOSE HARDNESS TESTING BASED ON COMBINED GAMMA- AND X-RAY IRRADIATION FACILITIES

Armen V. Sogoyan, Alexey S. Artamonov, Aleksander Y Nikiforov, Dmitry V. Boychenko

DOI Number
-
First page
329
Last page
338

Abstract


A method is proposed to test microelectronic parts total ionizing dose hardness based on a rationally balanced combination of gamma- and X-ray irradiation facilities. The scope of this method is identified, and a step-by-step algorithm of combined testing is provided, along with a test example of the method application.

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References


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Methods for the prediction of total-dose effects on modern integrated semiconductor devices in space: A review / Belykov V.V., Pershenkov V.S., Zebrev G.I., Sogoyan A.V., Chumakov A.I., Nikiforov A.Y., Skorobogatov P.K. // Russian Microelectronics, 2003, 32 (1) , pp. 31-47

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ISSN: 0353-3670 (Print)

ISSN: 2217-5997 (Online)

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