REDUCED LOW DOSE RATE SENSITIVITY (RLDRS) IN BIPOLAR DEVICES

Vyacheslav Pershenkov, Alexander Bakerenkov, Alexander Rodin, Vladislav Felitsyn, Vitaly Telets, Vladimir Belyakov

DOI Number
https://doi.org/10.2298/FUEE2002303P
First page
303
Last page
316

Abstract


Possible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate sensitivity (RLDRS)in bipolar devices is described. Modification of the low dose rate conversion model is presented. The enhanced or reduced sensitivity can be connected with a specific position of the effective Fermi level relatively acceptor and donor radiation-induced interface traps. The qualitative and quantitative analysis of the low dose rate effects is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge were taken into account. It leads to dependence of the accumulation of radiation-induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS and RLDRS conversion model describes the low dose rate effect in as “true” dose rate effect.


Keywords

total dose, low dose rate, bipolar devices, ELDRS, conversion model

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References


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