A SINGLE POWER SUPPLY 0.1-3.5 GHZ LOW NOISE AMPLIFIER DESIGN USING A LOW COST 0.5 µM D-MODE PHEMT PROCESS

Denis Sotskov, Vadim Elesin, Alexander Kuznetsov, Nikolay Usachev, Nikita Zhidkov, Alexander Nikiforov

DOI Number
https://doi.org/10.2298/FUEE2002317S
First page
317
Last page
326

Abstract


Design and testing results of a single power supply wide-band low noise amplifier (LNA) based on low cost 0.5 µm D-mode pHEMT process are presented. It is shown that the designed cascode LNA has operating frequency range up to 3.5 GHz, power gain above 15 dB, noise figure below 2.2 dB, output linearity above 17 dBm and power consumption less than 325 mW. Potential immunity of the LNA to total ionizing dose and destructive single event effects exceed 300 krad and 60 MeV·cm2/mg respectively.


Keywords

low noise amplifier (LNA), pseudo high-electron mobility transistor (pHEMT), cascode, radiation tolerance

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References


D.I. Sotskov, N.A. Usachev, V.V. Elesin, A. G. Kuznetsov, K.M. Amburkin, G. V. Chukov, M. I. Titova, N. M. Zidkov, "D-pHEMT 0.5 um Process Characterization to Wide-Band LNA Design", In Proceedings of the 31th Int. conf. on microelectronics (MIEL 2019), 2019, pp. 99–102.

G. Gonzalez. Microwave Transistor Amplifiers: Analysis and Design. 2nd ed. Pearson. 1996. 528 p.

N. Usachev, V. Elesin, A. Nikiforov, G. Chukov, G. Nazarova, D. Sotskov, N. Shelepin, V. Dmitriev "System Design Considerations of Universal UHF RFID Reader Transceiver ICs", Facta Universitatis, Series: Electronics and Energetics, vol. 28, no. 2, pp. 297–307, 2015.

G.D. Vendelin, A.M. Pavio, U.L. Rohde. Microwave Circuit Design Using Linear and Nonlinear Techniques. John Wiley & Sons Ltd, 2005, 1058 p.

D.V. Gromov, V.V. Elesin, S.A. Polevich, et al. "Ionizing-Radiation Response of the GaAs/(Al, Ga)As PHEMT: A Comparison of Gamma- and X-ray Results", Russian Microelectronics, vol. 33, no. 2, 2004, pp. 111–115.

G.V. Chukov, V.V. Elesin, G.N. Nazarova, A.Y. Nikiforov, D.V. Boychenko, V.A. Telets, A.G. Kuznetsov, K.M. Amburkin, "SEE testing results for RF and microwave ICs", In Proceedings of the 2014 IEEE Radiation Effects Data Workshop, 2014, pp. 233–235.

H.-C. Chiu et al., "Enhancement- and Depletion-Mode InGaP/InGaAs pHEMTs on 6-Inch GaAs Substrate", In Proceedings Asia-Pacific Microwave Conference, 2005, pp. 1–4.

O.R. Fazylkhanov, I.S. Pushnitsa, S.I. Strelnikov, M.A. Kalyakin, A.H. Filaretov, "Process Design Kit verification - methodology and practice", 2017, Crimico, pp. 143–149.

I.J. Bahl. Fundamentals of RF and Microwave Transistor Amplifiers. John Wiley & Sons. 2009. 671 p.

G. Wang, J. Liu et al., "The Design of Broadband LNA with Active Biasing based on Negative Technique", Journal of Microelectronics, Electronic Components and Materials, vol. 48, no. 2, pp. 115–120, 2018.

J.P. Conlon, N. Zhang, M.J. Poulton et al., "GaN wide band power integrated circuits", IEEE Compound Semiconductor Integrated Circuit Symposium (CSIC), 2006, pp. 85–88.

Bagher Afshar, Ali M. Niknejad. "X/Ku Band CMOS LNA Design Techniques", IEEE Custom Integrated Circuits Conference, 2006, pp. 389–392.

G.N. Nazarova, V.V. Elesin, D.I. Sotskov, “An approach to low noise amplifier optimization in Advanced Design System CAD”, IT Security (Russia), 2016, vol. 23, no. 3, pp. 53–59.

D.I. Sotskov, V.V. Elesin, K.M. Amburkin, G.N. Nazarova, N.A. Usachev, A.Y. Nikiforov, "Design and Testing Issues of a High-Speed SOI CMOS Dual-Modulus Prescaler for Radiation Tolerant Frequency Synthesizers", In Proceedings of the 30th Int. conf. on microelectronics (MIEL 2017), 2017, pp. 329–332.

A.S. Artamonov, A.A. Sangalov, A.Y. Nikiforov, V.A. Telets, D.V. Boychenko, "The New Gamma Irradiation Facility at the National Research Nuclear University MEPhI", In Proceedings of the IEEE Radiation Effects Data Workshop, 2014, pp. 258–261.

D. Boychenko, O. Kalashnikov, A. Nikiforov, A. Ulanova, D. Bobrovsky, P. Nekrasov. "Total ionizing dose effects and radiation testing of complex multifunctional VLSI devices", Facta Univesitatis, Series: Electronics and Energetics, vol. 28, no. 1, pp. 153–164, 2015.


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