Denis Sotskov, Vadim Elesin, Alexander Kuznetsov, Nikolay Usachev, Nikita Zhidkov, Alexander Nikiforov

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Design and testing results of a single power supply wide-band low noise amplifier (LNA) based on low cost 0.5 µm D-mode pHEMT process are presented. It is shown that the designed cascode LNA has operating frequency range up to 3.5 GHz, power gain above 15 dB, noise figure below 2.2 dB, output linearity above 17 dBm and power consumption less than 325 mW. Potential immunity of the LNA to total ionizing dose and destructive single event effects exceed 300 krad and 60 MeV·cm2/mg respectively.


low noise amplifier (LNA), pseudo high-electron mobility transistor (pHEMT), cascode, radiation tolerance

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