Giovanni Breglio, Andrea Irace, Luca Maresca, Michele Riccio, Gianpaolo Romano, Paolo Spirito

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The aim of this paper is to give a presentation of the principal applications of Infrared Thermography for analysis and testing of electron devices. Even though experimental characterization could be carried out on almost any electronic devices and circuits, here IR Thermography for investigation of power semiconductor devices is presented. Different examples of functional and failure analysis in both transient and lock-in modes will be reported.

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O. Breitenstein, M. Langenkamp, Lock-in Thermography-Basics and Use for Functional Diagnostics of Electronic Components, Springer, Berlin, (2003).

O. Breitenstein, M. Lagenkamp, Lock-in contact thermography investigation of lateral electronic inhomogeneities in semiconductor devices, Sensors Actuators A: Phys Volume, 71 (1–2) (1998), pp. 46–50.

X. Maldaque, Theory and Practice of Infrared Technology for Nondestructive Testing, Wiley, New York, 2001.

J.P. Rakotoniaina, O. Breitenstein, M. Lagenkamp, Localization of weak heat sources in electronic devices using highly sensitive lock-in thermography, Materials Science and Engineering: B, 91-92, pp. 481 – 485, 2002.

M. Riccio, A. Pantellini, A. Irace, G. Breglio, A. Nanni, C. Lanzieri, Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology, Microelectron. Reliab. 51(9), pp. 1725-1729, 2011.

N. Killat, M. Kuball, T. Chou, U. Chowdhury, J. Jimenez, Temperature assessment of AlGaN/GaN HEMTs: A comparative study by Raman, electrical and IR thermography, Reliability Physics Symposium (IRPS), 2010 IEEE International , vol., no., pp.528,531, 2-6 May 2010.

D. May, B. Wunderle, M.A. Ras, W. Faust, A. Gollhard, R. Schacht, B. Michel, Material characterization and non-destructive failure analysis by transient pulse generation and IR-thermography, Thermal Inveatigation of ICs and Systems, 2008. THERMINIC 2008. 14th International Workshop on , vol., no., pp.47,51, 24-26 Sept. 2008.

J.H.L. Ling, A.A.O. Tay, Kok Fah Choo, Weiguo Chen, Thermal characterization and modelling of a gallium arsenide power amplifier MMIC, Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2012 13th IEEE Intersociety Conference on , vol., no., pp.440,445, May 30 2012-June 1 2012.

M. Riccio, L. Maresca, A. Irace, G. Breglio, Y. Iwahashi, Impact of gate drive voltage on avalanche robustness of trench IGBTs, Microelectronics Reliability, Volume 54, Issues 9–10, September–October 2014, Pag. 1828-1832.

M. Riccio, A. Castellazzi, G. De Falco, A. Irace, Experimental analysis of electro-thermal instability in SiC Power MOSFETs, Microelectronics Reliability, Volume 53, Issues 9–11, September–November 2013, Pag. 1739-1744.

G. Romano, M. Riccio, G. De Falco, L. Maresca, A. Irace, G. Breglio, An ultrafast IR thermography system for transient temperature detection on electronic devices, Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2014 30th Annual , pp.80,84, March 2014

doi: 10.1109/SEMI-THERM.2014.6892219.

S. Huth, O. Breitenstein, A. Huber, U. Lambert, Localization of gate oxide integrity defects in silicon metal-oxide-semiconductor structures with lock-in IR thermography, Journal of Applied Physics , vol.88, no.7, pp.4000,4003, Oct 2000, doi: 10.1063/1.1310185.

G. Breglio, A. Irace, E. Napoli, M. Riccio, P. Spirito, K. Hamada, T. Nishijima, T. Ueta, Detection of localized UIS failure on IGBTs with the aid of lock-in thermography, Microelectronics Reliability, Volume 48, Issues 8–9, August–September 2008, Pages 1432-1434, ISSN 0026-2714,

M. Riccio, A. Irace, G. Breglio, L. Rossi, M. Barra, F. V. Di Girolamo and A. Cassinese, Current distribution effects in organic sexithiophene field effect transistors investigated by lock-in thermography: Mobility evaluation issues, Appl. Phys. Lett. 93, 243504 (2008);

M. Riccio, L. Rossi, A. Irace, E. Napoli, G. Breglio, P. Spirito, R. Tagami, Y. Mizuno, Analysis of large area Trench-IGBT current distribution under UIS test with the aid of lock-in thermography, Microelectronics Reliability, Volume 50, Issues 9–11, September–November 2010, Pages 1725-1730, ISSN 0026-2714,


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