Novkovski, Nenad, Institute of Physics, Faculty of Natural Sciences and Mathematics, University “Ss. Cyril and Methodius”, Arhimedova 3, 1000 Skopje, Macedonia, Macedonia, the former Yugoslav Republic of
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Vol 27, No 2 (2014) - INVITED PAPERS
PHYSICAL MODELING OF ELECTRICAL AND DIELECTRIC PROPERTIES OF HIGH-k Ta2O5 BASED MOS CAPACITORS ON SILICON
Abstract PDF
ISSN: 0353-3670 (Print)
ISSN: 2217-5997 (Online)
COBISS.SR-ID 12826626