Author Details

Novkovski, Nenad, Institute of Physics, Faculty of Natural Sciences and Mathematics, University “Ss. Cyril and Methodius”, Arhimedova 3, 1000 Skopje, Macedonia, Macedonia, the former Yugoslav Republic of

  • Vol 27, No 2 (2014) - INVITED PAPERS
    PHYSICAL MODELING OF ELECTRICAL AND DIELECTRIC PROPERTIES OF HIGH-k Ta2O5 BASED MOS CAPACITORS ON SILICON
    Abstract  PDF