Vol.11, No 1, 2012 pp. 15 - 23
UDC 621.3.049.77   621.3.019.3   621.382.323

---

LIFETIME ESTIMATION IN NBT-STRESSED P-CHANNEL POWER VDMOSFETS
Danijel Danković¹, Ivica Manić¹, Vojkan Davidović¹, Aneta Prijić¹, Snežana Đorić-Veljković², Snežana Golubović¹, Zoran Prijić¹, Ninoslav Stojadinović^1
1University of Niš, Faculty of Electronic Engineering, Department of Microelectronics, Niš, Serbia
²University of Niš, Faculty of Civil Engineering and Architecture, Niš, Serbia
E-mail: danijel.dankovic@elfak.ni.ac.rs

---

Abstract. This paper presents a method for lifetime estimation in negative bias temperature stressed p-channel power vertical double-diffused MOS field-effect transistors (VDMOSFETs). The usage of voltage and temperature models for extrapolation to normal operation voltage and temperature, respectively, is demonstrated. A double extrapolation, along both voltage and temperature axes, which lead to lifetime estimates for any reasonable combination of operation voltage and temperature, has been proposed as well. The proposed method can be applied in estimating the lifetime of any other MOSFETs.
Key Words: lifetime estimation, NBTI, VDMOSFET.

---

ODREĐIVANJE VREMENA POUZDANOG RADA P-KANALNIH VDMOS TRANZISTORA SNAGE IZLOŽENIH NBT NAPREZANJU U ovom radu je predstavljen metod za određivanje perioda pouzdanog rada naponsko temperaturno naprezanih p-kanalnih VDMOS tranzistora snage. Prikazani su naponski i temperaturni model za ekstrapolaciju na radne napone i temperature, redom. Takođe, prikazana je i dvostruka sukcesivna ekstrapolacija, duž naponske i temperaturne ose, koja omogućava određivanje perioda pouzdanog rada za željene vrednosti radnog napona i temperature. Ovaj metod može biti primenjen za određivanje perioda pouzdanog rada bilo kog MOS tranzistora.
Ključne reči: određivanje vremena pouzdanog rada, NBTI, VDMOSFET