REALIZATION OF KINK EFFECT IN THE DRAIN CHARACTERISTICS OF III-NITRIDE/Β-GA2O3 NANO-HEMT DUE TO TRAPS AND SELF-HEATING
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C. T. Ma and Z. H. Gu, "Review of GaN HEMT applications in power converters over 500 W", Electronics, vol. 8, no. 12, p. 1401, 2019.
V. Hemaja and D. K. Panda, "A Comprehensive Review on High Electron Mobility Transistor (HEMT) Based Biosensors: Recent Advances and Future Prospects and its Comparison with Si-Based Biosensor", Silicon, vol. 14, no. 5, pp. 1873–1886, 2022.
N. Islam, M. F. P. Mohamed, M. F. A. J. Khan, S. Falina, H. Kawarada and M. Syamsul, "Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review", Crystals, vol. 12, no. 11, p. 1581, 2022.
F. Roccaforte, G. Greco, P. Fiorenza and F. Iucolano, "An overview of normally-off GaN-based high electron mobility transistors", Materials (Basel), vol. 12, no. 10, pp. 1–18, 2019.
M. Haziq, S. Falina, A. A. Manaf, H. Kawarada and M. Syamsul, "Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review", Micromachines, vol. 13, no. 12, p. 2133, 2022.
G. Purnachandra Rao, T. R. Lenka, R. Singh, N. E. I. Boukortt, S. M. Sadaf and H. P. T. Nguyen, "Comparative Study of III-Nitride Nano-HEMTs on Different Substrates for Emerging High-Power Nanoelectronics and Millimetre Wave Applications", J. Electron. Mater., vol. 52, no. 3, pp. 1948–1957, 2023.
G. P. Rao, T. R. Lenka, N. E. I. Boukortt, S. M. Sadaf and H. P. T. Nguyen, "Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness", J. Mater. Sci. Mater. Electron., vol. 34, no. 18, p. 1442, 2023.
G. P. Rao, T. R. Lenka, N. E. I. Boukort and H. P. T. Nguyen, "Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field-plated III-nitride nano-HEMT on β-Ga2O3 substrate", Int. J. Numer. Model. Electron. Networks, Devices Fields, no. March, pp. 1–15, 2023.
R. K. Kaneriya et al., "Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications", Microelectron. Eng., vol. 255, no. January, p. 111724, 2022.
G. Purnachandra Rao, T. Ranjan Lenka and H. Pham Trung Nguyen, "Analysis of Channel length, Gate length and Gate position Optimization of III-Nitride/β-Ga2O3 Nano-HEMT for High-Power Nanoelectronics and Terahertz Applications", Mater. Sci. Eng. B, vol. 293, no. April, p. 116498, 2023.
G. Meneghesso et al., "Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate", Microelectron. Reliab., vol. 58, pp. 151–157, 2016.
X. Chen, S. Boumaiza and L. Wei, "Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs", IEEE Trans. Electron Devices, vol. 66, no. 9, pp. 3748–3755, 2019.
G. Purnachandra Rao, T. R. Lenka, N. E. I. Boukortt and H. P. T. Nguyen, "Investigation of the Temperature Impact on the Performance Characteristics of the Field-Plated Recessed Gate III-Nitride HEMT on β-Ga2O3 Substrate", in Micro and Nanoelectronics Devices, Circuits and Systems, 3rd ed., Lecture Notes in Electrical Engineering 1067, Springer Nature Singapore Pte Ltd. 2024, 2024, pp. 111–121.
J. Mukherjee, A. Malik, S. Vinayak, D. S. Rawal and R. S. Dhaka, "Deep Trap Characterization and the Kink Effect in AlGaN/GaN HEMTs", IETE Tech. Rev. (Institution Electron. Telecommun. Eng. India), vol. 39, no. 2, pp. 335–342, 2022.
C. Sharma, R. Laishram, Amit, D. S. Rawal, S. Vinayak and R. Singh, "Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices", AIP Adv., vol. 7, no. 8, p. 085209, 2017.
G. Crupi, A. Raffo, Z. Marinković, D. M. M. P. Schreurs and A. Caddemi, "A Comprehensive and Critical Overview of the Kink Effect in S22 for HEMT Technology", In Proceedings of the 14th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS), 2019, pp. 13–20.
F. M. Ciou et al., "Analysis of the buffer trap-induced kink effect in AlGaN/GaN HEMT on SiC substrate", Semicond. Sci. Technol., vol. 37, no. 8, p. 085022, 2022.
G. Crupi, A. Raffo, A. Caddemi and G. Vannini, "Kink effect in S22 for GaN and GaAs HEMTs", IEEE Microw. Wirel. Components Lett., vol. 25, no. 5, pp. 301–303, 2015.
S. Mao and Y. Xu, "Investigation on the I-V kink effect in large signal modeling of AlGaN/GaN HEMTs", Micromachines, vol. 9, no. 11, p. 571, 2018.
D. S. Software, "ATLAS User ’ s Manual", vol. II, no. November, pp. 567–1000, 1998.
T. Grasser, T. W. Tang, H. Kosina and S. Selberherr, "A review of hydrodynamic and energy-transport models for semiconductor device simulation", Proc. IEEE, vol. 91, no. 2, pp. 251–273, 2003.
J. Xue et al., "Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications", J. Appl. Phys., vol. 111, no. 11, p. 114513, 2012.
M. Valdinoci et al., "Impact-ionization in silicon at large operating temperature", Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99), 1999, pp. 27–30.
G. K. Wachutka, "Rigorous Thermodynamic Treatment of Heat Generation and Conduction in Semiconductor Device Modeling", IEEE Trans. Comput. Des. Integr. Circuits Syst., vol. 9, no. 11, pp. 1141–1149, 1990.
M. Grupen, "Reproducing GaN HEMT Kink Effect by Simulating Field-Enhanced Barrier Defect Ionization", IEEE Trans. Electron Devices, vol. 66, no. 9, pp. 3777–3783, 2019.
M. H. Somerville, A. Ernst and J. A. Del Alamo, "A physical model for the kink effect in InAlAs/InGaAs HEMT’s", IEEE Trans. Electron Devices, vol. 47, no. 5, pp. 922–930, 2000.
A. Jarndal and F. M. Ghannouchi, "Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects", Solid. State. Electron., vol. 123, pp. 19–25, 2016.
F. M. Ciou et al., "Analysis of the buffer trap-induced kink effect in AlGaN/GaN HEMT on SiC substrate", Semicond. Sci. Technol., vol. 37, no. 8, pp. 2–8, 2022.
W. Kruppa, J. B. Boos, B. R. Bennett and M. Goldenberg, "Traps and the kink effect in AlSb/InAs HEMTs", In Proceedings of 8th International Conference on Indium Phosphide and Related Materials, 1996, pp. 458–461.
K. Kim and S. Lee, "Analysis of Kink Effect in Short-Channel Floating Body PD-SOI MOSFETs", IEEE J. Electron Devices Soc., vol. 11, no. April, pp. 354–358, 2023.
M. H. Somerville, J. A. Del Alamo and W. Hoke, "Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMT’s", IEEE Electron Device Lett., vol. 17, no. 10, pp. 473–475, 1996.
S. Chander, P. Singh, S. Gupta, D. S. Rawal and M. Gupta, "Self-heating effects in gan high electron mobility transistor for different passivation material", Def. Sci. J., vol. 70, no. 5, pp. 511–514, 2020.
D. Gryglewski, W. Wojtasiak, E. Kamińska and A. Piotrowska, "Characterization of self-heating process in gan-based hemts", Electronics, vol. 9, no. 8, p. 1305, 2020.
M. Cioni et al., "Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs", IEEE Trans. Electron Devices, vol. 68, no. 7, pp. 3325–3332, 2021.
L. Zhang et al., "Epitaxially-grown GaN junction field effect transistors", IEEE Trans. Electron. Devices, vol. 47, no. 3, pp. 507–511, 2000.
P. Vigneshwara Raja, J. C. Nallatamby, N. DasGupta and A. DasGupta, "Trapping effects on AlGaN/GaN HEMT characteristics", Solid. State. Electron., vol. 176, no. July 2020, p. 107929, 2021.
Z. Kourdi, B. Bouazza, A. Guen-Bouazza and M. Khaouani, "Side effects in InAlN/GaN high electron mobility transistors",” Microelectron. Eng., vol. 142, pp. 52–57, 2015.
N. K. Subramani, M. Bouslama, R. Sommet and J. C. Nallatamby, "Time Domain Drain Lag Measurement and TCAD-based Device Simulations of AlGaN/GaN HEMT: Investigation of Physical Mechanism", In Proceedings of the 14th European Microwave Integrated Circuits Conference (EuMIC), 2019, pp. 21–24.
B. Güneş, A. Ghobadi, O. Odabasi, B. Bütün and E. Özbay, "Improved drain lag by reduced surface current in GaN HEMT via an ultrathin HfO2 blanket layer", Semicond. Sci. Technol., vol. 38, no. 6, p. 065002, 2023.
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