TOTAL IONIZING DOSE EFFECTS AND RADIATION TESTING

Dmitry Boychenko, Oleg Kalashnikov, Aleksandr Nikiforov, Anastasija Ulanova, Dmitry Bobrovsky, Pavel Nekrasov

DOI Number
-
First page
153
Last page
164

Abstract


Total ionizing dose (TID) effects and radiation tests of complex multifunctional Very-large-scale integration (VLSI) integrated circuits (ICs) rise up some particularities as compared to conventional "simple" ICs. The main difficulty is to organize informative and quick functional test dirctly under irradiation. Functional tests approach specified for complex multifunctional VLSI devices is presented and the basic radiation test procedure is discussed in application to some typical examples.

 

 


Full Text:

PDF

References


A. Nikiforov, A. Chumakov, V. Telets, et. al, “IC Space Radiation Effects Experimental Simulation”, // Proc. of Workshop "Space Radiation Environment Modelling New Phenomena and Approaches", Oct. 7-9, 1997, Moscow, Russia, p. 4.11.

V. Belyakov, A. Chumakov, A. Nikiforov, V. Pershenkov, “IC's radiation effects modeling and estimation”, // Microelectronics Reliability, 1999, v. 40, № 12, pp. 1997-2018.

V. Belyakov, V. Pershenkov, G. Zebrev, et. al, “Methods for the prediction of total-dose effects on modern integrated semiconductor devices in space: A review”, // Russian Microelectronics, 2003, v. 32, № 1, pp. 25-38.

D. Gromov, V. Elesin, G. Petrov et. al, “Radiation Effects in Nanoelectronic Elements”, // Semiconductors, 2010, v. 44, № 13, pp. 1669-1702.

D. Boychenko, L. Kessarinskiy, D. Pechenkina, “The Influence of the Electrical Conditions on Total Dose Behavior of the Analog Switches”, // RADECS Proceedings, 2011, pp. 822-824.

P. Nekrasov, A. Demidov, O. Kalashnikov, “Functional checks of microprocessors during radiation tests”, // Instruments and Experimental Techniques, 2009, v. 52, № 2, pp. 196-199.

O. Kalashnikov, A. Demidov, A. Nikiforov, et. al, “Integrating analog-to-digital converter radiation hardness test technique and results”, // IEEE Transactions on Nuclear Science, 1998, v. 45, № 6(1), pp. 2611-2615.

A. Boruzdina, A. Ulanova, N. Grigor'ev, A. Nikiforov, “Radiation-induced degradation in the dynamic parameters of memory chips”, // Russian Microelectronics, 2012, v. 41, № 4, pp. 259-265.

O. Kalashnikov, “Statistical Variations of Integrated Circuits Radiation Hardness”, // RADECS Proceedings, 2011, pp. 661-665.

O. Kalashnikov, “CMOS Integrated Circuits Total Dose Functional Upset Sensitivity to Operation Mode”, // Proc. of the 4th Workshop on Electronics for LHC Experiments, 1998, Rome, Italy, pp. 484-485.

A. Kirgizova, A. Nikiforov, N. Grigor'ev, et. al, “Dominant mechanisms of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology”, // Russian Microelectronics, 2006, v. 35, № 3, pp. 162-176.

A. Karakozov, O. Korneev, P. Nekrasov, et. al, “Bias conditions and functional test procedure influence on PowerPC7448 microprocessor TID tolerance”, // RADECS Proceedings, 2013 (to be published).

A. Akhmetov, D. Boychenko, D. Bobrovskiy, et. al., “System on module total ionizing dose distribution modeling”, // Proceedings of the International Conference on Microelectronics, ICM, 2014, pp. 329-331.

D. Bobrovsky, O. Kalashnikov, P.Nekrasov, “Functional control technique for FPGA total ionizing dose testing”, RADECS Proceedings, 2012 (to be published).

O. Kalashnikov, A. Artamonov, A. Demidov, et. al, “ADC/DAC Radiation Test Technique”, // Workshop Record 4th European Conf. "Radiations and Their Effects on Devices and Systems" (RADECS 97), 1997, Palm Beach-Cannes, France, pp. 56-60.

O. Kalashnikov, A. Nikiforov. “TID behavior of complex multifunctional VLSI devices”, // Proceedings of the International Conference on Microelectronics, ICM, 2014, pp. 455-458.

A. Nikiforov, P. Skorobogatov, “Physical principles of laser simulation for the transient radiation response of semiconductor structures, active circuit elements, and circuits: A nonlinear model”, // Russian Microelectronics, 2006, v. 35, № 3, pp. 138-149.

G. Davydov, V. Luchinin, A. Nikiforov, “Effect of Irradiation with Fast Neutrons on Electrical Characteristics of Devices Based on CVD 4H-SiC Epitaxial Layers”, // Semiconductors, 2003, v. 37, № 10, pp. 1229-1233.

A. Chumakov, A. Vasil'ev, A. Yanenko, et. al, “Single-event-effect prediction for ICs in a space environment”, // Russian Microelectronics, 2010, v. 39, № 2, pp. 74-78.

D. Bobrovsky, O. Kalashnikov, P.Nekrasov, “An estimate of the FPGA sensitivity to effects of single nuclear particles”, // Russian Microelectronics, 2012, v. 41, № 4, pp. 226-230.

J.R. Schwank. “Basic Mechanisms of Radiation Effects in the Natural Space Environment”, // NSREC Short Course, 1994.

A.H. Johnston et al. “Enhanced Damage in Bipolar Devices at Low Dose Rates: Effects at Very Low Dose Rates”, // IEEE Trans. Nuc. Sci. 1996, vol. 43, №6, p. 3049.

V.S. Pershenkov, A.I. Chumakov, A.Y. Nikiforov et al. “Interface trap model for the low-dose-rate effect in bipolar devices”, // Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, 2007.

D.M. Fleetwood. “Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices”, // IEEE Trans. Nucl. Sci., 2013, vol. 60, № 3. p.p. 1706-1730.

P.J. McWhorter, S.L. Miller, W.M. Miller. “Modeling the anneal of radiation-induced trapped holes in a varying thermal environment”, // IEEE Trans. Nucl. Sci., 1990, vol. 37, №6, p. 1682–1689.

A. Petrov, A. Vasil’ev, A. Ulanova, A. Chumakov, A. Nikiforov, “Flash memory cells data loss caused by total ionizing dose and heavy ions”, // Central European Journal of Physics, 2014, v.12, issue 10, pp. 725-729.

MIL-STD-883H – Ionizing radiation (total dose) test procedure // Department of Defense. Test method standard. Microcircuits, 2010.

D. Boychenko, O. Kalashnikov, A. Karakozov, A. Nikiforov, “The rational technique for CMOS ICs total dose hardness evaluation with low dose rate effects”, // Russian Microelectronics, 2014, v.43 – to be published.

D. Bobrovsky, G. Davydov, A.Petrov, et. al, “National Instruments platform based hardware-software system for electronic devices radiation experiment application”, // Electronics, 2012, v.5(97), pp. 91-106.

A. Chumakov, O. Kalashnikov, A. Nikiforov, et. al, “'REIS-IE' X-ray tester: description, qualification technique and results, dosimetry procedure”, // Proc. of the 1998 IEEE Radiation Effects Data Workshop, pp. 164-169.

A. Chumakov, A. Nikiforov, V. Pershenkov, et. al, “Prediction of local and global ionization effects on ICs: The synergy between numerical and physical simulation”, // Russian Microelectronics, 2003, v. 32, № 2, pp. 105-118.

A. Sogoyan, A. Artamonov, A. Nikiforov, D. Boychenko Method for integrated circuits total ionizing dose hardness testing based on combined gamma and X-ray irradiation facilities”, // Facta Universitatis: series Electronics and Energetics, 2014 - to be published.


Refbacks

  • There are currently no refbacks.


ISSN: 0353-3670 (Print)

ISSN: 2217-5997 (Online)

COBISS.SR-ID 12826626