### ZTC BIAS POINT OF ADVANCED FIN BASED DEVICE: THE IMPORTANCE AND EXPLORATION

**DOI Number**

**First page**

**Last page**

#### Abstract

*The present understanding of this work is about to evaluate and resolve the temperature compensation point (*TCP

*) or zero temperature coefficient (*ZTC

*) point for a sub-20 nm FinFET. The sensitivity of geometry parameters on assorted performances of Fin based device and its reliability over ample range of temperatures i.e. 25*H

^{0}C to 225^{0}C is reviewed to extend the benchmark of device scalability. The impact of fin height (*W*

_{Fin}), fin width (*T*

_{Fin}), and temperature (*) on immense performance metrics including on-off ratio (*I

*I*

_{on}/*g*

_{off}), transconductance (*A*

_{m}), gain (*f*

_{V}), cut-off frequency (*P*

_{T}), static power dissipation (*E*

_{D}), energy (*), energy delay product (EDP), and sweet spot (*g

*f*

_{m}*I*

_{T}/

_{D}) of the FinFET is successfully carried out by commercially available TCAD simulator Sentaurus^{TM}from Synopsis Inc.#### Full Text:

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