ELECTROMAGNETIC PULSE EFFECTS AND DAMAGE MECHANISM ON THE SEMICONDUCTOR ELECTRONICS

Vladimir Vasilevich Shurenkov, Vyacheslav Sergeevich Pershenkov

DOI Number
10.2298/FUEE1604621S
First page
621
Last page
629

Abstract


In recent years, growing attention has been paid to the threat posed by high-power microwave electromagnetic interference, which can couple into semiconductor electronic devices intentionally from microwave sources or unintentionally due to the proximity to general environmental HF signals. The microwave interference is often considered to have a pulse width ranging from several to several hundreds of nanoseconds. This paper examines physical mechanism of malfunction and destruction of electronic devices by high power microwaves electromagnetic pulse 


Keywords

electromagnetic pulse, EMP sources, electronic component, damage, coupling mechanisms, susceptibility

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References


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ISSN: 0353-3670 (Print)

ISSN: 2217-5997 (Online)

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