Singh, Rajan, Department of Electronics & Communication Engineering, National Institute of Technology Silchar, Assam, India, India

• Vol 34, No 3 (2021) - SPECIAL SECTION
  ANALYTICAL STUDY OF EFFECT OF ENERGY BAND PARAMETERS AND LATTICE TEMPERATURE ON CONDUCTION BAND OFFSET IN AlN/Ga2O3 HEMT
  Abstract  PDF

ISSN: 0353-3670 (Print)

ISSN: 2217-5997 (Online)

COBISS.SR-ID 12826626