CMOS IC RADIATION HARDENING BY DESIGN

Alessandra Camplani, Seyedruhollah Shojaii, Hitesh Shrimali, Alberto Stabile, Valentino Liberali

DOI Number
-
First page
251
Last page
258

Abstract


Design techniques for radiation hardening of integrated circuits in commercial CMOS technologies are presented. Circuits designed with the proposed approaches are more tolerant to both total dose and to single event effects. The main drawback of the techniques for radiation hardening by design is the increase of silicon area, compared with a conventional design.

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References


P. J. McWhorter and P. S. Winokur, “Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors,” Appl. Phys. Lett., vol. 48, pp. 133–135, Jan. 1986.

N. S. Saks, M. G. Ancona, and J. A. Modolo, “Radiation effects in MOS capacitors with very thin oxides at 80 K,” IEEE Trans. Nucl. Sci., vol. 31, pp. 1249–1255, Dec. 1984.

F. B. McLean, “A framework for understanding radiation-induced interface states in SiO2 MOS structures,” IEEE Trans. Nucl. Sci., vol. 27, pp. 1651–1657, Dec. 1980.

M. Gaillardin, V. Goiffon, S. Girard, M. Martinez, P. Magnan, and P. Paillet, “Enhanced radiation-induced narrow channel effects in commercial 0.18 μm bulk technology,” IEEE Trans. Nucl. Sci., vol. 58, pp. 2807–2815, Dec. 2011.

G. Baccarani and M. R. Wordeman, “Transconductance degradation in thin-oxide MOSFET’s,” IEEE Trans. Electron Devices, vol. 30, pp. 1295–1304, Oct. 1983.

J. R. Schwank, F. W. Sexton, M. R. Shaneyfelt, and D. M. Fleetwood, “Total ionizing dose hardness assurance issues for high dose rate environments,” IEEE Trans. Nucl. Sci., vol. 54, pp. 1042–1048, Aug2007.

T. C. May, “Soft errors in VLSI: Present and future,” IEEE Trans. Comp., Hybrids, Manufact. Technol., vol. 2, pp. 377–387, Dec. 1979.

J. L. Andrews, J. E. Schroeder, B. L. Gingerich, W. A. Kolasinski, R. Koga, and S. E. Diehl, “Single event error immune CMOS RAM,” IEEE Trans. Nucl. Sci., vol. 29, pp. 2040–2043, Dec. 1982.

L. T. Clark, K. C. Mohr, K. E. Holbert, X. Yao, J. Knudsen, and H. Shah, “Optimizing radiation hard by design SRAM cells,” IEEE Trans. Nucl. Sci., vol. 54, pp. 2028–2036, Dec. 2007.

A. Johnston, “The influence of VLSI technology evolution on radiation induced latchup in space systems,” IEEE Trans. Nucl. Sci., vol. 43, pp. 505–521, Apr. 1996.

J. H. Hohl and K. F. Galloway, “Analytical model for single event burnout of power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 34, pp. 1275–1280, Dec. 1987.

C. F. Wheatley, J. L. Titus, and D. I. Burton, “Single-event gate rupture in vertical power MOSFETs; an original empirical expression,” IEEE Trans. Nucl. Sci., vol. 41, pp. 2152–2159, Dec. 1994.

G. Anelli, M. Campbell, M. Delmastro, F. Faccio, S. Floria, A. Giraldo, E. Heijne, P. Jarron, K. Kloukinas, A. Marchioro, P. Moreira, and W. Snoeys, “Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects,” IEEE Trans. Nucl. Sci., vol. 46, pp. 1690–1696, Dec. 1999.

C. Calligaro, V. Liberali, A. Stabile, M. Bagatin, S. Gerardin, and A. Paccagnella, “A multi-megarad, radiation hardened by design 512 kbit SRAM in CMOS technology,” in Proc. IEEE Int. Conf. on Microelectronics (ICM), Cairo, Egypt, Dec. 2010, pp. 375–378.

M. Benigni, V. Liberali, A. Stabile, and C. Calligaro, “Design of rad-hard SRAM cells: A comparative study,” in Proc. IEEE Int. Conf. on Microelectronics (MIEL), Niš, Serbia, May 2010, pp. 279–282.

A. Stabile, V. Liberali, and C. Calligaro, “A radiation hardened 512 kbit SRAM in 180 nm CMOS technology,” in Proc. Int. Conf. on Electronics, Circuits and Systems (ICECS), Hammamet, Tunisia, Dec. 2009, pp. 655–658.

E. Do, V. Liberali, A. Stabile, and C. Calligaro, “Layout-oriented simulation of non-destructive single event effects in CMOS IC blocks,” in Proc. Eur. Conf. on Radiation and Its Effects on Components and Systems (RADECS), Bruges, Belgium, Sep. 2009.

A. Stabile, V. Liberali, and C. Calligaro, “Design of a rad-hard library of digital cells for space applications,” in Proc. Int. Conf. on Electronics, Circuits and Systems (ICECS), Malta, Sept. 2008, pp. 149–152.


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ISSN: 0353-3670 (Print)

ISSN: 2217-5997 (Online)

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