ANALYTICAL STUDY OF EFFECT OF ENERGY BAND PARAMETERS AND LATTICE TEMPERATURE ON CONDUCTION BAND OFFSET IN AlN/Ga2O3 HEMT

Rajan Singh, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen

DOI Number
https://doi.org/10.2298/FUEE2103323S
First page
323
Last page
332

Abstract


Apart from other factors, band alignment led conduction band offset (CBO) largely affects the two dimensional electron gas (2DEG) density ns in wide bandgap semiconductor based high electron mobility transistors (HEMTs). In the context of assessing various performance metrics of HEMTs, rational estimation of CBO and maximum achievable 2DEG density is critical. Here, we present an analytical study on the effect of different energy band parameters—energy bandgap and electron affinity of heterostructure constituents, and lattice temperature on CBO and estimated 2DEG density in quantum triangular-well. It is found that at thermal equilibrium, ns increases linearly with ΔEC at a fixed Schottky barrier potential, but decreases linearly with increasing gate-metal work function even at fixed ΔEC, due to increased Schottky barrier heights. Furthermore, it is also observed that poor thermal conductivity led to higher lattice temperature which results in lower energy bandgap, and hence affects ΔEC and ns at higher output currents. 

Keywords

2DEG density, CBO Conduction Band Offset, Heterojunction, HEMT, Lattice Temperature, Barrier, Buffer, Ga2O3

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References


REFERENCES

R. Singh, T. R. Lenka, S. A. Ahsan, and H. P. T. Nguyen, “Analytical Study of Conduction Band Discontinuity supported 2DEG Density in AlN/Ga2O3 HEMT,” In Proceedings of the International Conference on Micro/Nanoelectronics Devices, Circuits, and Systems (MNDCS-2021), 29-31 Jan 2021. http://mndcs.nits.ac.in/

U. K. Mishra, L. Shen, T. E. Kazior, Y. F. Wu, “GaN-based RF power devices and amplifiers,” In Proceedings of the IEEE. 16, Jan 2008, vol. 96, no. 2, pp. 287–305.

P. Parikh, Y. Wu, M. Moore, P. Chavarkar, U. Mishra, R. Neidhard, et al., “High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs,” In Proceedings of the IEEE Lester Eastman Conf. High Perform. Devices, Aug. 2002, pp. 415–421.

P. Kordos, A. Alam, J. Betko, P. P. Chow, M. Heuken, P. Javorka, et al., “Material and device issues of GaN-based HEMTs,” In Proceedings of the 8th IEEE Int. Symp. High Perform. Electron Devices Microw. Optoelectron. Appl., Nov. 2002, pp. 61–66.

S. J. Pearton, F. Ren, M. Tadjer, and J. Kim, “Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETs,” Journal of Applied Physics, vol. 124, no. 22, p. 220901, Dec 2018.

E. Ahmadi, and Y. Oshima, “Materials issues and devices of α – and β – Ga2O3,” Journal of Applied Physics, vol. 126, p. 160901, Oct. 2019.

Atlas, Device Simulator. “Atlas user’s manual.” Silvaco International Software, Santa Clara, CA, USA (2016).

Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica 34, vol. 1, pp. 149–154, 1967.

S. Rafique, L. Han, S. Mou, and H. Zhao, “Temperature and doping concentration dependence of the energy band gap in β-Ga2O3 thin films grown on sapphire,” Optical Material Express 3561, vol. 7, no. 10, Oct. 2017.

K. B. Nam, J. Li, J. Y. Lin, and H. X. Jiang, “Optical properties of AlN and GaN in elevated temperatures,” Applied Physics Letters, vol. 85, no. 16, Oct 2004.

Y. Zhang, et al., “Demonstration of high mobility and quantum transport in modulation-doped β- (AlxGa1-x)2O3/Ga2O3 heterostructures,” Applied Physics Letters, vol. 112, no. 17, p. 173502, Apr. 2018.

S. Kola, J. M. Golio, and G. N. Maracas, “An analytical expression for Fermi level versus sheet carrier concentration for HEMT modeling,” IEEE Electron Device Lett., vol. 9, no. 3, pp. 136–138, Mar. 1988.

X. Cheng, M. Li, and Y. Wang, “An analytical model for current voltage characteristics of AlGaN/GaN HEMTs in presence of self-heating effect,” Solid State Electron., vol. 54, no. 1, pp. 42–47, Jan. 2010.

S. Khandelwal, N. Goyal, and T. A. Fjeldly, “A physics based analytical model for 2DEG charge density in AlGaN/GaN HEMT devices,” IEEE Trans. Electron Devices, vol. 58, no. 10, pp. 3622–3625, Oct. 2011.

X. Cheng and Y. Wang, “A surface-potential-based compact model for AlGaN/GaN MODFETs,” IEEE Trans. Electron Devices, vol. 58, no. 2, pp. 448–454, Feb. 2011.

T. R. Lenka, and A. K. Panda, “Effect of structural parameters on 2DEG density and C ~ V characteristics of AlxGa1-xN/AlN/GaN-based HEMT,” Indian Journal of Pure & Applied Physics, vol. 49, pp. 416-422, Jun 2011.

S. Khandelwal and T. A. Fjeldly, “A physics based compact model for I–V and C–V characteristics in AlGaN/GaN HEMT devices,” Solid State Electron., vol. 76, pp. 60–66, Oct. 2012.

F. M. Yigletu, S. Khandelwal, T. A. Fjeldly, and B. Iniguez, “Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs,” IEEE Trans. Electron Devices, vol. 60, no. 11, pp. 3746–3752, Nov. 2013.

W. Wei, et al., “Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy,” Nanoscale Research Letters; vol. 7, p. 562, Dec. 2012.

H. Sun, et al., “Valence and conduction band offsets of β-Ga2O3/AlN heterojunction,” Applied Physics Letters, vol. 111, no. 16, p. 162105, Oct. 2017.

Y. K. Verma, V. Mishra, S. K. Gupta, “A Physics Based Analytical Model for MgZnO/ZnO HEMT,” Journal of Circuits, Systems, and Computers, Jan 2019.

H. Sun et al., “Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application,” Applied Surface Science, vol. 458, pp. 949–953, Jul. 2018.

R. Singh, T R Lenka, R T Velpula, B Jain, H Q T Bui, H P T Nguyen, “A novel β-Ga2O3 HEMT with fT of 166 GHz and X-band POUT of 2.91 W/mm,” Int. J. Numer Model El., e2794, 2020.

A. Mock, R. Korlacki, C. Briley, V. Darakchieva, B. Monemar, Y. Kumagai, K. Goto, M. Higashiwaki, M. Schubert, Phys. Rev. B Condens. Matter, vol. 96, no. 24, p. 245205, 2017.

Z. Zhang, E. Farzana, A.R. Arehart, and S.A. Ringel, “Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy,” Applied Physics Letters, vol. 108, p. 052105, Feb. 2016.

P. Reddy, I. Bryan, Z. Bryan, J. Tweedie, R. Kirste, R. Collazo, and Z. Sitar, “Schottky contact formation on polar and nonpolar AlN,” Journal Applied Physics, vol. 116, no. 19, p. 194503, Nov. 2014.

Y. Irokawa, E. Villora, and K. Shimamura, “Schottky Barrier Diodes on AlN Free-Standing Substrates,” Japanese Jornal of Applied Physics, vol. 51, no. 4R, p. 040206, Mar. 2012.

T. Kinoshita, T. Nagashima, T. Obata, S. Takashima, R. Yamamoto, R. Togashi, Y. Kumagai, R. Schlesser, R. Collazo, A. Koukitu, and Z. Sitar, “Fabrication of vertical Schottky barrier diodes on

n-type freestanding AlN substrates grown by hydride vapor phase epitaxy,” Appl. Phys. Exp., vol. 8, no. 6, p. 061003, May 2015.


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