SUCCESSIVE IRRADIATION AND BIAS TEMPERATURE STRESS INDUCED EFFECTS ON COMMERCIAL P-CHANNEL POWER VDMOS TRANSISTORS

Sandra Veljković, Nikola Mitrović, Vojkan Davidović, Emilija Živanović, Goran Ristić, Danijel Danković

DOI Number
https://doi.org/10.2298/FUEE2404561V
First page
561
Last page
579

Abstract


This study examines the effects of negative bias temperature (NBT) stress on irradiated commercial p-channel power VDMOS transistors, with a focus on contribution to threshold voltage shift of changes in gate oxide charge and interface traps. The research addresses the critical reliability concerns for these transistors, as shifts in the threshold voltage can notably influence device performance, particularly under conditions of elevated temperature and negative gate oxide fields. Considering that VDMOS transistors are power devices, high temperatures occur during their operation, which can cause NBT effects, and this definitely affects normal operation. Furthermore, the study investigates the implications of irradiation on the electrical parameters of VDMOS power transistors, highlighting the need for a thorough understanding of these effects. The experimental methodology includes both irradiation and subsequent NBT stress application. This paper provides a detailed analysis of both static and pulsed NBT stressing, with an emphasis on novel stress signals related to practical applications. The data presented in the paper were obtained by exposing components to NBT stresses with different polarizations on the gate, which were previously exposed to radiation to different doses, with and without polarization. Also, the results with different frequencies applied during NBT stress are presented. Results from the study elucidate the roles of gate oxide charge and interface traps in contributing to threshold voltage shifts, thereby offering critical insights into the reliability of p-channel power VDMOS transistors in various operational stress scenarios. Self-heating during both the operational and cooling phases of fresh and previously irradiated components were measured using IR camera These findings are instrumental for the design and operation of electronic systems that utilize these transistors, ensuring improved reliability and performance.


Keywords

reliability study, gate oxide charge, interface trap, threshold voltage, irradiation, self-heating

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References


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