Vol 37, No 4 (2024)

Table of Contents

EDITORIAL

THEMATIC ISSUE ON FAILURE MECHANISMS IN MICROELECTRONIC DEVICES
Danijel Danković
PDF
i-ii

SPECIAL SECTION

SUCCESSIVE IRRADIATION AND BIAS TEMPERATURE STRESS INDUCED EFFECTS ON COMMERCIAL P-CHANNEL POWER VDMOS TRANSISTORS
Sandra Veljković, Nikola Mitrović, Vojkan Davidović, Emilija Živanović, Goran Ristić, Danijel Danković
PDF
561-579
EVALUATING NBTI AND HCI EFFECTS ON DEVICE RELIABILITY FOR HIGH-PERFORMANCE APPLICATIONS IN ADVANCED CMOS TECHNOLOGIES
Karan Singh, Shruti Kalra, Jyoti Mahur
PDF
581-597
IMPACT OF INTERFACE OXIDE TYPE ON THE GAMMA RADIATION RESPONSE OF SIC TTL ICS
Alex Metreveli, Vuong Van Cuong, Shin-Ichiro Kuroki, Kenichi Tanaka, Carl-Mikael Zetterling
PDF
599-607
DETERMING THE CHARACTERISTICS OF THE LOCALIZED DENSITY OF STATES DISTRIBUTION PRESENT IN MOS2 2D FETS
Anisleidy Broche, Antonio Cerdeira, Benjamin Iñiguez, Magali Estrada
PDF
609-617

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