GENERATION OF SEQUENCES OF STRONG ELECTRIC MONOPULSES IN NITRIDE FILMS

Volodymyr Grimalsky, Svetlana Koshevay, Jesus Escobedo-Alatorre, Anatoliy Kotsarenko

DOI Number
https://doi.org/10.2298/FUEE2102187G
First page
187
Last page
201

Abstract


This paper presents theoretical investigation of the excitation of the sequences of strong nonlinear monopulses of space charge waves from input small envelope pulses with microwave carrier frequencies due to the negative differential conductivity in n-GaN and n-InN films. The stable numerical algorithms have been used for nonlinear 3D simulations. The sequences of the monopulses of the strong electric field of 3 – 10 ps durations each can be excited. The bias electric field should be chosen slightly higher than the threshold values for observing the negative differential conductivity. The doping levels should be moderate 1016 –1017 cm-3in the films of £ 2 mm thicknesses. The input microwave carrier frequencies of the exciting pulses of small amplitudes are up to 30 GHz in n-GaN films, whereas in n-InN films they are lower, up to 20 GHz. The sequences of the electric monopulses of high peak values are excited both in the uniform nitride films and in films with non-uniform conductivity. These nonlinear monopulses in the films differ from the domains of strong electric fields in the bulk semiconductors. In the films with non-uniform doping the nonlinear pulses are excited due to the inhomogeneity of the electric field near the input end of the film and the output nonlinear pulses are rather domains. 


Keywords

nitride films, negative differential conductivity, picosecond pulses, nonlinearity

Full Text:

PDF

References


V. Grimalsky, S. Koshevaya, J. Escobedo-A., and J. Sanchez-S., "Strong electric monopulses in nonuniformly doped nitride films under negative differential conductivity", In Proceedings of the 2019 31st IEEE International Conference on Microelectronics (MIEL), Nis, Serbia, 2019, pp. 83- 86.

Y-S. Lee, Principles of Terahertz Science and Technology, Springer, 2009, p. 340.

M. Perenzoni and D. J. Paul, Physics and Applications of Terahertz Radiation, Springer, 2014, p. 255.

H.-J. Song, T. Nagatsuma, Handbook of Terahertz Technologies. Devices and Applications, Boca Raton, CRC Press, 2015, p. 585.

G. Carpintero, L.E. Garcıa Muñoz, H.L. Hartnagel, S. Preu and A.V. Räisänen, Semiconductor Terahertz Technology. Devices and Systems at Room Temperature Operation, John Wiley & Sons, 2015, p. 386.

Y. Nakasha, "Special Section on Terahertz Waves Coming to the Real World" IEICE Trans. Electron., vol. E98.C, no. 12, December 2015.

S. J. Pearton, J. C. Zolper, R. J. Shul and F. Ren, "GaN: processing, defects, and devices", J. Appl. Phys., vol. 86, no 1, pp. 1-79, July 1999.

S. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, "III-nitrides: growth, characterization, and properties", J. Appl. Phys., vol. 87, no. 3, pp. 965-1006, February 2000.

V. Gruzhinskis, P. Shiktorov, E. Starikov, and J. H. Zhao, "Comparative study of 200–300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique", Semicond. Sci. Technol., vol. 16, no 8, pp. 798-805, August 2001.

J. T. Lü and J. C. Cao, "Terahertz generation and chaotic dynamics in GaN NDR diode", Semicond. Sci. Technol., vol. 19, no 4, pp. 451-456, April 2004.

V. I. Timofeyev, E. V. Semenovskaya and O.M. Falieieva, "Electrothermal analysis of GaN power submicron field-effect heterotransistors", Radioelectron. Commun. Syst., vol. 59, no 2, pp. 66–73, February 2016.

A. A. Kokolov and L. I. Babak, "Methodology of built and verification of non-linear EEHEMT model for GaN HEMT transistor", Radioelectron. Commun. Syst., vol. 58, no 10, pp. 435–443, October 2015.

P. Siddiqua, W. A. Hadi, A. K. Salhotra, M. S. Shur and S. K. O’Leary, "Electron transport and electron energy distributions within the wurtzite and zinc-blende phases of indium nitride: Response to the application of a constant and uniform electric field", J. Appl. Phys., vol. 117, no 12, Article ID 125705, June 2015.

W. A. Hadi, P. K. Guram, M. S. Shur and S. K. O’Leary, "Steady-state and transient electron transport within wurtzite and zinc-blende indium nitride", J. Appl. Phys., vol. 113, no 11, Article ID 113709, June 2013.

E. Jatirian Foltides, V. Grimalsky, S. Koshevaya and J. Escobedo-Alatorre, "Amplification of space charge waves in n-InN films of THz range", In Proceedings of the IEEE Latin America Microwave Conference LAMC-2016, Puerto Vallarta, Mexico, 2016, pp. 1-3.

V. Grimalsky, S. Koshevaya, M. Tecpoyotl-T. and F. Diaz-A.,"Influence of nonlocality on amplification of space charge waves in n-GaN films", J. Electromagn. Analysis & Applic. (JEMAA), vol. 3, no 2, pp. 33-38, February 2011.

V. Grimalsky, S. Koshevaya, I. Moroz, and A. Garcia-B., "Influence of nonlocality on amplification of space charge waves in n-GaN films", In Proceedings of the International Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves, Kharkov, Ukraine, 2010, pp. 1-4.

V. Grimalsky, S. Koshevaya, J. Sanchez-S. and Y. Rapoport, "Excitation of short monopulses in nitride films under negative differential conductivity", In Proceedings of the International IEEE Microwaves, Radar, and Remote Sensing Symposium, Kyiv, Ukraine, 2017, pp. 151-154.

S. V. Koshevaya, V. V. Grimalsky, J. Escobedo-Alatorre and M. Tecpoyotl-Torres, "Excitation of short electric monopulse in nitride films with negative differential conductivity", Radioelectron. Commun. Syst., vol. 62, no. 6, pp. 262–270, June 2019.

S. M. Sze and Kwok N. Ng, Physics of Semiconductor Devices, Hobokem, Wiley-Interscience, 2007. p. 815

G. E. Chaika, V. N. Malnev and M. I. Panfilov, "Interaction of light with space charge waves", In Proceedings of the SPIE. vol. 2795, 1996, pp. 279-282.

D. G. Sannikov and D. I. Semetsov, "Waveguide interaction of light with amplifying SCW", Physics of the Solid State (Fizika Tverdogo Tela), vol. 49, no. 3, pp. 488-492, March 2007.

S. Yu, Dadoenkova, I. O. Zolotovsky, I. S. Panyaev and D. G. Sannikov, "Modeling the generation of optical modes in a semiconductor waveguide with distributed feedback formed by a space charge wave", Comput. Opt., vol. 44, no 2, pp. 183-188, February 2020.

V. Grimalsky, S. Koshevaya, M. Tecpoyotl-T. and J. Escobedo-A., "Nonlinear interaction of terahertz and optical waves in nitride films", Terahertz Sci. Technol., vol.6, no. 3, рp. 165-176, June 2013.

V. V. Grimalsky, S. V. Koshevaya, Yu. G. Rapoport, "Superheterodyne amplification of electromagnetic waves of optical and terahertz bands in gallium nitride films", Radioelectron. Commun. Syst., vol. 54, no. 8, pp. 401-410, August 2011.

K. Tomizawa, Numerical Simulation of Submicron Semiconductor Devices, Boston: Artech House Publ., 1993, p. 356.

A. Garcia-B., V. Grimalsky, E. Gutierrez-D. and S. Koshevaya, "Dispersion relation for two-valley quasi-hydrodynamic models in SCWs propagation in n-GaAs thin films", In Proceedings of the 25th Internatioanl Conference on Microelectronics, Belgrade, Serbia, 2006, pp. 507-510.

M. Levinshtein, S. Rumyantsev and M. Shur, Properties of Advanced Semiconductor Materials: GaN, AlN, InN, Wiley, 2001, p. 216

R. Kircher and W. Bergner, Three-Dimensional Simulation of Semiconductor Devices, Basel, Birkhauser Verlag, 1991, p. 124.

W. H. Press, S. A. Teukolsky, W. T. Vetterling and B. P. Flannery, Numerical Recipes in Fortran, Cambridge, Cambridge Univ. Press, 1997, p. 1486.

A. A. Samarskii, The Theory of Difference Schemes, Marcel Dekker Inc., 2001, p. 761.

G. I. Marchuk, Splitting and Alternating Direction Methods. In Handbook of Numerical Analysis, Vol. I, Finite Difference Methods, Solution of Equations in R" (Part 1), Amsterdam, Elsevier, 1990, pp. 203-462.


Refbacks

  • There are currently no refbacks.


ISSN: 0353-3670 (Print)

ISSN: 2217-5997 (Online)

COBISS.SR-ID 12826626