COMPARISON OF DIFFERENT DEVICE CONCEPTS TO INCREASE THE OPERATING VOLTAGE OF A TRENCH ISOLATED SOI TECHNOLOGY TO ABOVE 900V
Abstract
For gate driver ICs in three phase power applications level shifters with more than 900V operating voltage are required. The extension of the voltage rating of an existing trench isolated SOI process was done with different device concepts: Serial stacking of lower voltage devices was evaluated as an alternative approach to conventional quasi-vertical and charge compensated lateral devices which need layout and material modifications. Based on sufficient 900V trench isolation the different device concepts were tested with diodes and transistors. For the usage as level shifters the focus was to achieve the required breakdown voltages with minimum area.
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DIRECTIVE 2009/125/EC: Design requirements for energy-related products
P. Vas and W. Dury: Electrical machines and drives: present and future, in Proc. of Electrotechnical Conference (MELECON '96), May 1996, vol. 1, pp. 67-74.
R.J. Kerkman, G.S. Skibinski, and D.W. Schlegel: AC drives: year 2000 (Y2K) and beyond, in Proc. of 1999 IEEE Applied Power Electronics Conference (APEC '99), March 1999, vol. 1, pp. 28-39.
Y. Tadros, J. Ranneberg and U. Shafer: Ring shaped motor-integrated electric drive for hybrid electric vehicles, in Proc. of 2003 European Power Electronics Conf. (EPE’03), Toulouse, France, Sept. 2003.
C. Klumpner, F. Blaabjerg, and P. Thorgersen: Converter topologies with low passive components usage for the next generation of integrated motor drives, in Proc. of 2003 IEEE Power Electronics Specialist Conference (PESC’03), vol. 2, pp. 568-573, June 2003.
M. Rossberg, B. Vogler. ; R. Herzer: 600V SOI Gate Driver IC with advanced level shifter concepts for medium and high power applications, Proc. 2007 European Conference on Power Electronics and Applications; Aalborg 2007, pp1-8
M. Munzer, W. Ademmer, B. Strzalkowski, K.T. Kaschani: Insulated signal transfer in a half bridge driver IC based on coreless transformer technology, PEDS 2003. The Fifth International Conference on Power Electronics and Drive Systems, pp. 93-96
http://www.xfab.com/en/technology/soi/10-um-xdh10/, XDH10 Data sheet
F. Udrea, D. Garner, K. Sheng; A. Popescu; H. T. Lim.; W. I. Milne: SOI power devices, Electronics and communications journal, Volume 12, Issue 1; Feb. 2000, 27ff
D.M Garner; F Udrea; H.T Lima; G Ensell; A.E Popescua, K Shenga, W.I Milnea: Silicon-on-insulator power integrated circuits; Microelectronics Journal Volume32, Issues 5-6; May-June2001; 517ff
Paul Schimel: Cascode Configured GaN Switch Enables Faster Switching Frequencies And Lower Losses; Electronic Design; May 14, 2012; WWW.electronicdesign.com
Huang, Xiucheng; Liu, Zhengyang; Li, Qiang; Lee, Fred C: Evaluation and Application of 600V GaN HEMT in Cascode Structure; Applied Power Electronics Conference and Exposition (APEC) 2013: Long Beach, CA, pp1279-1286
R. Herzer, J. Lehmann, M. Rosberg, B. Vogler: IGBT Gate Driver Solutions for low and Medium Power Applications, www.power-mag.com Issue 6 2010 Power Electronics Europe
R. Lerner, Klaus Schottmann, Siegfried Hering, Andreas Käberlein; Matthias Fritzsch; Klaus Schneider; Daniel Beyer; Steffen Heinz, Using SOI capabilities to increase breakdown voltages from < 600V to > 900V, ISPS’14, 12th International Seminar on Power Semiconductors, Prague, August 2014, pp91-96
Ralf Lerner; Uwe Eckoldt; Klaus Schottmann; Steffen Heinz; Klaus Erler; Andre Lange, Gunter Ebest, Time Dependent Isolation Capability of High Voltage Deep Trench Isolation, Proceedings of the 20th International Symposium on Power Semiconductor Devices & ICs, ISPSD '08 Orlando, Florida May 18-22, 205-208
R. Lerner, U. Eckoldt, A. Hoelke, A. Nevin, G. Stoll, Optimized Deep Trench Isolation for High Voltage Smart Power Process, Proceedings of the 17th International Symposium on Power Semiconductor Devices & ICs, ISPSD '05 Santa Barbara, California, May 23-26, 135-138
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