DETERMING THE CHARACTERISTICS OF THE LOCALIZED DENSITY OF STATES DISTRIBUTION PRESENT IN MOS2 2D FETS
Abstract
The behaviour of MoS2 FETs, with channel lengths greater than the mean free path of carriers was analysed. Electrical behaviour of experimental devices with channel lengths of 5 mm and 0.1 mm was studied, modelled and simulated, concluding that the predominant transport mechanism observed was hopping. The presence of a localized density of states (DOS) distribution in the semiconductor layer, causing the behaviour observed in these devices, was studied and determined by both modelling and simulation.
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