DETERMING THE CHARACTERISTICS OF THE LOCALIZED DENSITY OF STATES DISTRIBUTION PRESENT IN MOS2 2D FETS

Anisleidy Broche, Antonio Cerdeira, Benjamin Iñiguez, Magali Estrada

DOI Number
https://doi.org/10.2298/FUEE2404609B
First page
609
Last page
617

Abstract


The behaviour of MoS2 FETs, with channel lengths greater than the mean free path of carriers was analysed. Electrical behaviour of experimental devices with channel lengths of 5 mm and 0.1 mm was studied, modelled and simulated, concluding that the predominant transport mechanism observed was hopping. The presence of a localized density of states (DOS) distribution in the semiconductor layer, causing the behaviour observed in these devices, was studied and determined by both modelling and simulation.


Keywords

DOS in MoS2 2D FET, mobility of MoS2 2D FETs, MoS2 2D FET modelling and simulation

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References


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